| PART |
Description |
Maker |
| LPC2364FBD100 |
ARM7 with 128 kB flash, 34 kB SRAM, Ethernet, USB 2.0 Device, CAN, and 10-bit ADC LPC2364FBD100<SOT407-1 (LQFP100)|<<http://www.nxp.com/packages/SOT407-1.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| TFBGA100 LPC2364HBD100 LPC2364FET100 LPC2364FBD100 |
ARM7 with 128 kB flash, 34 kB SRAM, Ethernet, USB 2.0 Device, CAN, and 10-bit ADC
ARM7 with 512 kB flash, 58 kB SRAM, Ethernet, USB 2.0 Device, CAN, SD/MMC, and 10-bit ADC
Single-chip 16-bit/32-bit microcontrollers; up to 512 kB flashnull
Single-chip 16-bit/32-bit ocontrollers; up to 512 kB flash with ISP/IAP, Ethernet, USB 2.0, CAN, and 10-bit ADC/DAC
Single-chip 16-bit/32-bit ocontrollers; up to 512 kB flash with ISP/IAP, Ethernet, USB 2.0, CAN, and 10-bit ADC/DAC
|
NXP Semiconductors
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| AM29F010B-90EK AM29F010B-45EC AM29F010B-45PC AM29F |
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 128K X 8 FLASH 5V PROM, 90 ns, PDSO32
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 128K X 8 FLASH 5V PROM, 45 ns, PDSO32
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 128K X 8 FLASH 5V PROM, 45 ns, PDIP32
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 128K X 8 FLASH 5V PROM, 120 ns, PDSO32
15V Single Output Isolated DC/DC Converter 128K X 8 FLASH 5V PROM, 120 ns, PDIP32
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 128K X 8 FLASH 5V PROM, 120 ns, PQCC32
128K X 8 FLASH 5V PROM, 90 ns, PDIP32
|
Spansion, Inc.
SPANSION LLC
|
| S29WS128J0PBAW10 |
128/64 Megabit (8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 8M X 16 FLASH 1.8V PROM, 55 ns, PBGA84
|
Spansion, Inc.
|
| AM29LV128ML103PCI AM29LV128MH103PCI AM29LV128MH/L |
Am29LV128MH/L - 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control 8M X 16 FLASH 3V PROM, 100 ns, PDSO56
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control 8M X 16 FLASH 3V PROM, 110 ns, PDSO56
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control 8M X 16 FLASH 3V PROM, 110 ns, PBGA64
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit?3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
|
Advanced Micro Devices, Inc.
|
| N25Q128A13BF840E N25Q128A23BF840E N25Q128A33BF840E |
16M X 8 FLASH 3V PROM, PDSO16
16M X 8 FLASH 3V PROM, PBGA24
128-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase on boot sectors,XiP enabled, serial flash memory with 108 MHz SPI bus interface
|
Numonyx B.V
|
| IDT728981 IDT728981DB IDT728981P IDT728981J |
128 x 128 TSI, 4 I/O at 2Mbps, Variable Delay, 5.0V
TSI-TDM Switches
TIME SLOT INTERCHANGE DIGITAL SWITCH 128 x 128
|
IDT[Integrated Device Technology]
|
| AM29LV200BB-120WAC AM29LV200BB-120WAF AM29LV200BB- |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2兆位56Kx8Bit/128Kx16位）.0伏的CMOS引导扇区闪存
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2兆位256Kx8Bit/128Kx16位）.0伏的CMOS引导扇区闪存
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 128K X 16 FLASH 3V PROM, 90 ns, PBGA48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 128K X 16 FLASH 3V PROM, 70 ns, PBGA48
|
Advanced Micro Devices, Inc.
|
| AM29LV128MH93RFI |
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
|
Advanced Micro Devices, Inc.
|
| AM29PDL129H88VKI AM29PDL129H68VKI |
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control and Dual chip Enable 8M X 16 FLASH 3V PROM, 85 ns, PBGA80
|
Spansion, Inc.
SPANSION LLC
|
|
